Polycrystalline silicon, breaking piece and a process for the purification of the polycrystalline silicon breakage pieces

摘要

The object of the invention is a polycrystalline silicon, breaking piece with a concentration of carbon at the surface of 0,5 – 35 ppbw.A process for the purification of the polycrystalline silicon breakage pieces with carbon - contamination on the surface, comprising a thermal treatment of the polycrystalline smaller in a reactor at a temperature of 350 to 600°C, wherein the polycrystalline smaller during the thermal treatment in an inert gas atmosphere are provided, with the polycrystalline smaller after the thermal treatment, a concentration of carbon at the surface of 0,5 – 35 have ppbw.