首页>
外国专利>
Polycrystalline silicon piece and method for breaking a silicon body to siloxene
Polycrystalline silicon piece and method for breaking a silicon body to siloxene
展开▼
机译:多晶硅片和将硅体破碎成硅氧烷的方法
展开▼
页面导航
摘要
著录项
相似文献
摘要
The present invention relates to a polycrystalline silicon piece with at least one fracture - or cut surface, the contamination with metals of 0,07 ng / cm2 to 1 ng / cm2 having.The present invention also relates to a process for breaking a silicon body to siloxene, preferably of a rod made of polycrystalline silicon,comprising the steps of:a) determination of the lowest bending strength frequency of the silicon body to siloxene;b) excitation of the silicon body to siloxene in its lowest bending strength frequency by means of a vibration exciter, wherein the excitation to a stimulus agency of the silicon body to siloxene is effected in such a way that the silicon body breaks at the point of excitation;so that a silicon piece with of a fractured surface results which is a contamination with metals of 0,07 ng / cm2 to 1 ng / cm2 having.
展开▼
机译:本发明涉及一种具有至少一个断裂或切割表面的多晶硅片,该金属片的污染为0.07ng / cm 2 Sup>至1ng / cm 2 Sup本发明还涉及一种将硅体断裂为硅氧烷的方法,该方法优选为由多晶硅制成的棒,该方法包括以下步骤:a)确定硅体对硅氧烷的最低弯曲强度频率; b )通过振动激励器以最低的弯曲强度频率将硅体激发成硅氧烷,其中以使硅体在激发点破裂的方式来激发硅体对硅氧烷的刺激剂。 ;因此会导致表面破裂的硅片被具有0.07 ng / cm 2 Sup>到1 ng / cm 2 Sup>的金属污染。
展开▼