Metal-oxide-semiconductor transistor, has semiconductor zones with same conductivity connected with same conductivity of drain and source areas, and extended in substrate so as to couple two adjacent portions of channel in electrically

摘要

The transistor has a semiconductor substrate (2) comprising a source area (3) and a drain area (4). A gate (7) is placed above the substrate between the source and drain areas. The gate is segmented with two gate segments (8), where each segment of the gate controls a portion of a channel in the substrate. The segments of the gate are electrically connected with each other. Semiconductor zones (9) with same conductivity are connected with the same conductivity of the drain and the source areas and extended in the substrate so as to couple two adjacent portions of the channel electrically.