SEMICONDUCTOR DEVICE, SCHOTTKY BARRIER DIODE, FIELD EFFECT TRANSISTOR, MIS FIELD EFFECT TRANSISTOR AND MOS FIELD EFFECT TRANSISTOR

摘要

PROBLEM TO BE SOLVED: To maintain a two-dimensional electron gas in an electron transit layer to have a high carrier density and high mobility, and improve breakdown voltage of a device.;SOLUTION: A semiconductor device comprises an electron supply layer 12 having a superlattice structure in which four and more layers of Al_xGa_1-xN layers (12-1)-(12-n)(0x≤1, n: natural number) having at least two types of different Al compositions x in an upper layer or above of an electrode transit layer 11 which is formed on a predetermined base substance and composed of an undoped GaN layer. Each of the Al_xGa_1-xN layers (12-1)-(12-n) is formed in a film thickness which does not generate a two-dimensional electron gas inside the electron supply layer 12. A field plate layer 14 composed of Al_zGa_1-zN layer may be stacked in an upper layer of the electron supply layer 12. In this case, the Al_yGa_1-yN layer 12a in a top layer of the electron supply layer 12 serves as an etching stop layer. An undermost layer of the electron supply layer 12 may be an AlN layer.;COPYRIGHT: (C)2014,JPO&INPIT