首页> 外国专利> CRYSTAL SILICON SOLAR CELL PREVENTING GENERATION OF DARK AREA DUE TO BREAKING OF ELECTRODE GATE LINES

CRYSTAL SILICON SOLAR CELL PREVENTING GENERATION OF DARK AREA DUE TO BREAKING OF ELECTRODE GATE LINES

机译:电极栅线破裂导致晶体硅太阳能电池防止暗区的产生

摘要

PROBLEM TO BE SOLVED: To provide a crystal silicon solar cell that can ameliorate loss of electric performance due to gate break, allows finer gate lines to be designed, has a simple structure and is easily materialized.;SOLUTION: An embodiment comprises a silicon chip body 1. On a surface of the silicon chip body 1, a plurality of main gate lines 2 are formed in the longitudinal direction; a plurality of fine gate lines 3 are formed in the transverse direction to electrically connect to the main gate lines 2; and a plurality of second gate lines 4 are provided to electrically connect the fine gate lines 3.;COPYRIGHT: (C)2014,JPO&INPIT
机译:要解决的问题:提供一种晶体硅太阳能电池,该晶体硅太阳能电池可以改善由于栅极断裂而导致的电性能损失,允许设计更细的栅极线,具有简单的结构并且易于实现。在硅芯片主体1的表面上,沿长度方向形成有多个主栅极线2。在横向上形成多条细栅极线3以电连接到主栅极线2。并设置有多个第二栅极线4以电连接细栅极线3。COPYRIGHT:(C)2014,JPO&INPIT

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