METHOD OF MANUFACTURING GaN THIN FILM AND GaN THIN FILM

摘要

PROBLEM TO BE SOLVED: To provide a method of manufacturing a GaN thin film on Al_xGa_1-xN(0.5≤x≤1) not by island-shaped growth, and to provide a GaN thin film.;SOLUTION: By using a metal-organic chemical vapor deposition apparatus, an AlN thin film is grown on a sapphire substrate (step S1). For an AlN thin film thus deposited, rocking curves of a symmetry plane and an asymmetry plane are measured by X-ray diffractometry (step S2). An AlN thin film thus obtained is introduced into the metal-organic chemical vapor deposition apparatus, temperature in the growth chamber is raised to about 1100°C, and thermal cleaning of the surface of the AlN thin film is performed (step S3). Temperature is then decreased to 1060°C, pressure in the growth chamber is set to 200 Torr, and a GaN thin film is grown about 200 nm, by using trimethyl gallium as the Ga material, and using NH₃ as the N material.;COPYRIGHT: (C)2014,JPO&INPIT