LAMINATE TYPE NITRIDE SEMICONDUCTOR DEVICE INCLUDING InAlN LAYER AND GaN LAYER

摘要

PROBLEM TO BE SOLVED: To solve the problem that when a recess or a partly residual gate electrode is formed in a GaN-based heterojunction lamination structure, dry etching is required and etching damage remains intact in a semiconductor device.;SOLUTION: A source electrode 2 and a drain electrode 6 are formed on the top surface of a GaN-based heterojunction lamination structure, with a recess 8a formed at a position dividing between the source electrode and the drain electrode, and the recess 8a filled with a gate electrode 4. When a GaN-based heterojunction lamination structure where a Ga-containing nitride layer is nonexistent is used for upper layers above the bottom face of the recess 8a, a recess can be formed by wet etching, in which case etching damage does not occur in a Ga-containing nitride layer 10 exposed to the bottom face of the recess 8a. A structure in which a p-type InAlN layer is let partially remain to constitute a gate electrode can also be manufactured by wet etching.;COPYRIGHT: (C)2014,JPO&INPIT