P TYPE NITRIDE SEMICONDUCTOR LAYER DOPED WITH CARBON AND DEVICES INCLUDING THE P TYPE NITRIDE SEMICONDUCTOR LAYER DOPED WITH CARBON

摘要

A method of stably manufacturing a p type nitride semiconductor layer using a carbon dopant is provided. A crystal plane substrate is prepared having a main surface which has an offset angle in a range of +/−0.1% with respect to a C-plane or a crystal plane equivalent to the C-plane; and during a time period in which a III-source gas and a V-source gas are supplied to grow a III-V group nitride semiconductor layer, carbon tetrabromide (CBr₄), which is a carbon source gas, is supplied so as to introduce carbon into a V-group atom layer.