NITRIDE BASED LIGHT EMITTING DEVICE WITH A CARBON DOPED P-TYPE NITRIDE LAYER FOR SECURING A HIGH FREE HOLE CONCENTRATION

摘要

PURPOSE: A nitride based light emitting device with a carbon doped p-type nitride layer is provided to increase the free hole concentration of a p-type nitride layer by doping a p-type dopant and carbon, reduce the resistance of a light emitting device, and improve light efficiency.;CONSTITUTION: An n-type nitride layer(130) is formed on a substrate(110). An active layer(140) is formed on the n-type nitride layer. A p-type nitride layer(150) including Al is formed on the active layer. A P electrode(170) is formed on the p-type nitride layer. An N electrode(180) is formed on the exposed n-type nitride layer.;COPYRIGHT KIPO 2013