METHOD OF SELECTING POLYCRYSTALLINE SILICON ROD, METHOD OF MANUFACTURING POLYCRYSTALLINE SILICON BULK, AND METHOD OF MANUFACTURING SINGLE CRYSTAL SILICON

摘要

PROBLEM TO BE SOLVED: To provide a technique contributing to stable manufacture of single crystal silicon by selecting polycrystalline silicon which is suitable as a raw material for single crystal silicon manufacture with high quantitativity and reproducibility.;SOLUTION: A method of selecting a polycrystalline silicon rod includes: sampling a plate-like sample having a main plane in a section perpendicular to a radial direction of a polycrystalline silicon rod grown by deposition in a chemical growth method; measuring and comparing a thermal diffusivity α(T) of the plate-like sample with a thermal diffusivity α_R(T) of a standard sample; and selecting a polycrystalline silicon rod which is suitable as a raw material for single crystal silicon manufacture based upon the ratio (α(T)/α_R(T))) of the thermal diffusivities. As a standard sample for standardization, single crystal silicon is suitable and a single crystal silicon plate-like sample having a 100 plane as a main plane is specially suitable. When single crystal silicon is grown using the polycrystalline silicon rod, a crystal line is not lost. Consequently, single crystal silicon can be stably manufactured.;COPYRIGHT: (C)2014,JPO&INPIT