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Methods of trichlorosilane synthesis for polycrystalline silicon production. Part 2: Hydrochlorination and redistribution

机译:多晶硅生产三氯硅烷合成方法。 第2部分:氢氯化和再分配

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Novel technical solutions and ideas for increasing the yield of solar and semiconductor grade polycrystalline silicon processes have been analyzed. The predominant polycrystalline silicon technology is currently still the Siemens process including the conversion of technical grade silicon (synthesized by carbon-thermal reduction of quartzites) to trichlorosilane followed by rectification and hydrogen reduction. The cost of product silicon can be cut down by reducing the trichlorosilane synthesis costs through process and equipment improvement. Advantages, drawbacks and production cost reduction methods have been considered with respect to four common trichlorosilane synthesis processes: hydrogen chloride exposure of technical grade silicon (direct chlorination, DC), homogeneous hydration of tetrachlorosilane (conversion), tetrachlorosilane and hydrogen exposure of silicon (hydro chlorination silicon, HC), and catalyzed tetrachlorosilane and dichlorosilane reaction (redistribution of anti-disproportioning reaction). These processes remain in use and are permanently improved. Catalytic processes play an important role on silicon surface, and understanding their mechanisms can help find novel applications and obtain new results. It has been noted that indispensable components of various equipment and process designs are recycling steps and combined processes including active distillation. They provide for the most complete utilization of raw trichlorosilane, increase the process yield and cut down silicon cost.
机译:已经分析了提高太阳能和半导体级多晶硅工艺产量的新颖技术解决方案和思路。主要的多晶硅技术目前仍然是西门子工艺,包括将技术级硅(通过石英酯的碳热还原合成)转化为三氯硅烷,然后进行整流和还原。通过通过工艺和设备改进降低三氯硅烷合成成本,可以减少产品硅的成本。已经考虑了四种常见的三氯硅烷合成方法:技术级硅(直氯,DC),四氯硅烷(转化),四氯硅烷和硅的氢暴露的氧化氢(转化),四氯硅烷和硅的氢暴露(Hydro氯化硅,HC)和催化的四氯硅烷和二氯硅烷反应(抗抑制反应的再分布)。这些过程仍在使用中,永久改善。催化过程在硅表面发挥着重要作用,并了解其机制可以帮助找到新的应用并获得新的结果。已经注意到,各种设备和工艺设计的不可或缺的组件是回收步骤和包括主动蒸馏的组合过程。它们提供了最完整的原始三氯硅烷利用,增加了工艺产量并减少硅成本。

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