Formation of a SiCMOSFET having high channel mobility by treating the oxide interface cesium ions

摘要

Method of forming a semiconductor structure includes the steps of giving an insulating layer on the semiconductor layer , and a step of diffusing the cesium ions from outside the cesium ion source of the insulating layer in the insulating layer . MOSFET that includes an insulating layer which has been treated with cesium ions , can indicate an increase in the inversion layer mobility . [ Selection Figure ] Figure 1