Method of manufacturing a CMOS device, and it was improved stress having a channel region is applied (method of forming a semiconductor device and the semiconductor device)

摘要

Be generated (ie, tensile and compressive) stresses with present invention relates to the same stress-inducing material, different p-FET and in the n-FET, to increase the hole mobility and electron mobility of each internally. Complementary metal oxide semiconductor which has been improved with a channel region stressed A1 The present invention relates to (CMOS) devices. More specifically, CMOS devices are improved each comprises a field effect transistor (FET) having a channel region disposed in a semiconductor device structure, a semiconductor device structure, equivalent crystal planes of the first set of and an additional surfaces of one or more a top surface that is oriented along one of the, is oriented along the equivalent crystal planes of the different sets of second. These additional surfaces can be easily formed by crystallographic etching. Furthermore, as the stressor layers is, and is disposed on the surface of the additional semiconductor device structure or one having a tensile stress or intrinsic compressive stress is applied compressive stress or tensile stress to the channel region of the FET is placed, composed. Such stressor layer may be formed by pseudomorphic growth of semiconductor material having a lattice constant different from the semiconductor device structure. [Selection Figure Figure 5