The Investigation of 2D Channel Material Device in Semiconductor Process and Equipment Development by CMOS Manufacturing Technology

摘要

This paper will describe the novel MoS_2 material of transition-metal dichalcogenides, TMD in process and device development at recent five years. In the first, we will introduce its unique 2D layered material properties by CMOS compatible manufacturing technology in semiconductor solid growth method and special monolayer surface treatment process. Then we will discuss its atomic channel scale, low voltage operation and 3D stackable structure in nano electrionic device application. This advanced 2D electronic channel material integration technique in nano semiconductor manufacturing will provide a possible solution for future next non-Si CMOS technology.