Equipment and processing amount measuring method of the film in the semiconductor device manufacturing process, and apparatus treatment method of the treated material using the same, and apparatus end point determination method of the process using the same

摘要

PROBLEM TO BE SOLVED: To measure the actual etching depth and the residual film amount of a layer to be treated precisely in an on-line manner and to decide the end point of a process.;SOLUTION: A standard pattern using a wavelength as a parameter for the differential value of interference light with reference to the prescribed step of a first material to be treated and a standard pattern using a wavelength as a parameter for the differential value of interference light with reference to the prescribed mask residual film thickness of the material to be treated are set. Then, the intensity of interference light regarding a second material to be treated whose constitution is identical to that of the first material to be treated is measured regarding a plurality of wavelengths, and an actual pattern using a wavelength as a parameter fro the differential value of the measured intensity of the interference light is found. On the basis of the standard pattern and on the basis of the actual pattern for the differential value, the step and the mask residual film thickness of the second material to be treated are found. The end point of the process is decided on the basis of the found step and the found mask residual film thickness of the second material to be treated.;COPYRIGHT: (C)2003,JPO