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Being the manner which produces the increase conversion null semiconductor device of Drive electric current of the try gate MOSFET due to the introduction of the compressed
Being the manner which produces the increase conversion null semiconductor device of Drive electric current of the try gate MOSFET due to the introduction of the compressed
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机译:由于压缩的引入是产生尝试栅极MOSFET的驱动电流增加转换的空半导体器件的方式
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摘要
A semiconductor device comprises a fin and a metal gate film. The fin is formed on a surface of a semiconductor material. The metal gate film formed on the fin and comprises ions implanted in the metal gate film to form a compressive stress within the metal gate. In one exemplary embodiment, the surface of the semiconductor material comprises a (100) crystalline lattice orientation, and an orientation of the fin is along a 100 direction with respect to the crystalline lattice of the semiconductor. In another exemplary embodiment, the surface of the semiconductor material comprises a (100) crystalline lattice orientation, and the orientation of the fin is along a 110 direction with respect to the crystalline lattice of the semiconductor. The fin comprises an out-of-plane compression that is generated by the compressive stress within the metal gate film.
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