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Flat die or the sputtering target of the flat die which possesses the sputtering

机译:平板或具有溅射的平板的溅射靶

摘要

PROBLEM TO BE SOLVED: To provide a silver alloy based sputtering target with a large area, specifically, a flat sputtering target with an area of 0.3 m2 or larger or a tubular sputtering target with a length of at least 1.0 m, which has less spark discharge hazard so that a sputtering process can be performed at comparatively high output density; and to provide a low-cost manufacturing method for the sputtering target.;SOLUTION: A silver based alloy has a crystalline structure having an average grain size of less than 120 μm; has an oxygen content of less than 50 mass ppm; has the contents of impurity elements of less than 0.5 mass ppm of aluminum, lithium, sodium, calcium, magnesium, barium, and chromium respectively; and has a metal purity of at least 99.99 mass%.;COPYRIGHT: (C)2014,JPO&INPIT
机译:要解决的问题:提供大面积的银合金基溅射靶,具体地,提供面积为0.3 m 2 或更大的平面溅射靶,或者提供长度为的管状溅射靶。至少1.0 m,具有较小的火花放电危险,因此可以在较高的输出密度下执行溅射工艺;解决方案:银基合金具有平均晶粒尺寸小于120μm的晶体结构。氧含量小于50质量ppm;铝,锂,钠,钙,镁,钡和铬的杂质元素含量分别小于0.5质量ppm;且金属纯度至少为99.99质量%。;版权所有:(C)2014,JPO&INPIT

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