The crack of the mixed nitride of nitriding gallium or gallium and other metal which possess that the monocrystal formation which is not included, the production manner, and the electron or the photoelectron device

摘要

The invention concerns a monocrystalline coating crack-free coating of gallium nitride or mixed gallium nitride and another metal, ON a substrate likely to cause extensive stresses in the coating, said substrate being coated with a buffer layer and wherein: at least a monocrystalline layer of a material having a thickness ranging between 100 and 300 nm, preferably between 200 and 250 nm, and whereof crystal lattice parameter is less than the crystal lattice parameter of the gallium nitride or of the mixed gallium nitride with another metal and is inserted in the coating of gallium nitride or mixed gallium nitride with another metal. The invention also concerns the method for preparing said coating. The invention further concerns electronic and optoelectronic devices comprising said coating.