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thick layer of gallium nitride or mixed nitride of gallium and of another metal, and electronic device comprising such a layer or optoelectronics
thick layer of gallium nitride or mixed nitride of gallium and of another metal, and electronic device comprising such a layer or optoelectronics
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机译:厚的氮化镓层或镓与另一种金属的混合氮化物层,以及包括这种层或光电层的电子设备
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摘要
The invention concerns a monocrystalline coating crack-free coating of gallium nitride or mixed gallium nitride and another metal, on a substrate likely to cause extensive stresses in the coating, said substrate being coated with a buffer layer, wherein: at least a monocrystalline layer of a material having a thickness ranging between 100 and 300 nm, preferably between 200 and 250 nm, and whereof crystal lattice parameter is less than the crystal lattice parameter of the gallium nitride or of the mixed gallium nitride with another metal, is inserted in the coating of gallium nitride or mixed gallium nitride with another metal. The invention also concerns the method for preparing said coating. The invention further concerns electronic and optoelectronic devices comprising said coating.
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