It is the semiconductor substrate which has

摘要

PROBLEM TO BE SOLVED: To suppress the generation of side etching in dry etching.;SOLUTION: A semiconductor substrate having a mask for forming grooves in a region for forming a semiconductor element on one side of a semiconductor film and an insulation film on the other side of the semiconductor film is placed on the lower electrode of the dry etching device so that a surface with the mask may be a processed surface; the outer periphery of the semiconductor substrate is pressed with a metallic clamp to be the potential substantially the same as that of the lower electrode; dry etching using the insulation film as an etching stopper layer is started; and the region and the clamp are brought into an electrically insulation state after at least the bottom surface of the grooves formed around the region reaches the insulation film.;COPYRIGHT: (C)2010,JPO&INPIT