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CHARGE-TRAP NOR WITH SILICON-RICH NITRIDE AS A CHARGE TRAP LAYER
CHARGE-TRAP NOR WITH SILICON-RICH NITRIDE AS A CHARGE TRAP LAYER
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机译:电荷陷阱或不带富硅氮化物的电荷陷阱层
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摘要
A charge-trapping NOR (CT-NOR) memory device and methods of fabricating a CT-NOR memory device utilizing silicon-rich nitride (SiRN) in a charge-trapping (CT) layer of the CT-NOR memory device.
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