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Dielectric Properties of Multi-Layers Hexagonal Boron Nitride

机译:多层六方氮化硼的介电性能

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A higher value of the dielectric constant of h-BN makes it quite favourable material in energy storing device. The variation in dielectric constant was observed as a function of thickness. In this research work multilayers of Hexagonal Boron Nitride (h-BN) was fabricated by using the Chemical exfoliation method. Two solvents Dimethylformamide (DMF) and Isopropyl Alcohol (IPA) were used for the exfoliation of h-BN. Successful sonication of hexagonal boron nitride led to the formation of Boron Nitride nanosheets (BNNs). The stable dispersibility of h-BN in Dimethylformamide and Isopropyl Alcohol was confirmed by UV Visible Spectroscopy, X-ray diffraction (XRD) and Scanning electron microscopy (SEM) confirm the mono crystallite structure (002) and nanoflakes like morphology of h-BN respectively. This appropriate strategy offered a feasible route to produce multilayer of hexagonal boron nitride. After the successful fabrication of h-BN multilayers its dielectric properties were calculated by using LCR meter. Profilometer revealed the variation in thickness and value of Dielectric constant was calculated by using its formula.
机译:H-Bn的介电常数的较高值使其在能量存储装置中具有相当有利的材料。观察到介电常数的变化作为厚度的函数。在本研究中,通过使用化学剥离法制造六方氮化硼(H-BN)的多层。两种溶剂二甲基甲酰胺(DMF)和异丙醇(IPA)用于H-BN的剥离。成功的六角形氮化物的超声处理导致硼氮化硼纳米片(BNN)的形成。通过UV可见光谱,X射线衍射(XRD)和扫描电子显微镜(SEM)确认H-Bn在二甲基甲酰胺和异丙醇中的稳定分散性分别证实了单晶硅结构(SEM)和H-BN形态的单晶硅结构(002)和纳米薄片。这种适当的策略提供了一种可行的途径来生产六边形氮化硼的多层。在成功制造H-BN多层之后,通过使用LCR表计算其介电性质。 Profilecometer通过使用其公式揭示了介电常数的厚度和值的变化。

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