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THREE-DIMENSIONAL SEMICONDUCTOR DEVICES WITH CURRENT PATH SELECTION STRUCTURE AND METHODS OF OPERATING THE SAME
THREE-DIMENSIONAL SEMICONDUCTOR DEVICES WITH CURRENT PATH SELECTION STRUCTURE AND METHODS OF OPERATING THE SAME
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机译:具有当前路径选择结构的三维半导体器件及其操作方法
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摘要
Provided are three-dimensional semiconductor devices and methods of operating the same. The three-dimensional semiconductor devices may include active patterns arranged on a substrate to have a multi-layered and multi-column structure and drain patterns connected to respective columns of the active patterns. The methods may include a layer-selection step connecting a selected one of layers of the active patterns selectively to the drain patterns. For example, the layer-selection step may be performed in such a way that widths of depletion regions to be formed in end-portions of the active patterns are differently controlled depending on to a height from the substrate.
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