THREE-DIMENSIONAL SEMICONDUCTOR DEVICES WITH CURRENT PATH SELECTION STRUCTURE AND METHODS OF OPERATING THE SAME

摘要

Provided are a three-dimensional semiconductor device and a method of operating the same. The three-dimensional semiconductor device includes active patterns which are arranged on a substrate to form a multi-layered and multi-column structure and drain patterns which are connected to the columns of the active patterns, respectively. The operating method includes a layer-selection step which differently controls the widths of depletion regions which are formed at the ends of the active patterns according to the height from the substrate. As a result, a layer selected among the active layers can be selectively connected to the drain patterns.