首页>
外国专利>
INTEGRATED CIRCUITS HAVING BORON-DOPED SILICON GERMANIUM CHANNELS AND METHODS FOR FABRICATING THE SAME
INTEGRATED CIRCUITS HAVING BORON-DOPED SILICON GERMANIUM CHANNELS AND METHODS FOR FABRICATING THE SAME
展开▼
机译:具有掺硼硅锗通道的集成电路及其制造方法
展开▼
页面导航
摘要
著录项
相似文献
摘要
Integrated circuits and methods for fabricating integrated circuits are provided. One method includes recessing a PFET active region to form a recessed PFET surface region. A boron-doped SiGe channel is formed overlying the recessed PFET surface region.
展开▼