Silicon quantum integrated circuits - an attempt to fabricate silicon-based quantum devices using CMOS fabrication techniques

摘要

An introduction to the methodology, design concepts, fabrication routes and potential applications is presented of research to fabricate quantum devices on a complementary metal oxide semiconductor (CMOS) fabrication line. Si/Si_(1-x)Ge_x heterostructure field effect transistors, velocity modulation transistors and resonant tunnelling diodes are considered and initial fabrication stages discussed.