FABRICATION METHOD OF SILICON QUANTUM DOT LAYER AND DEVICES FABRICATED USING THE SAME

摘要

PURPOSE: A method for fabricating a silicon quantum dot layer and devices manufactured thereby are provided to reduce manufacturing costs by forming multilayer consisting of a silicon quantum dot layer and a polycrystalline silicon layer. CONSTITUTION: A first cover layer(CAP1) is formed on a substrate(SUB). A silicon containing precursor layer(SCP) is formed on the first cover layer. A second cover layer(CAP2) is formed on the silicon containing precursor layer. The silicon containing precursor layer is changed to a first polycrystalline silicon layer, a silicon quantum dot layer, and a second polycrystalline silicon layer successively laminated by irradiating the first cover layer with continuous wave laser or a flash lamp, the silicon containing precursor layer, and the second cover layer.