ELECTROCHEMICALLY-GATED FIELD-EFFECT TRANSISTOR, METHODS FOR ITS MANUFACTURE, ITS USE, AND ELECTRONICS COMPRISING SAID FIELD-EFFECT TRANSISTOR

摘要

An electrochemically-gated field-effect transistor includes a source electrode, a drain electrode, a gate electrode, a transistor channel and an electrolyte. The transistor channel is located between the source electrode and the drain electrode. The electrolyte completely covers the transistor channel and has a one-dimensional nanostructure and a solid polymer-based electrolyte that is employed as the electrolyte.