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TRENCH MOSFET STRUCTURE HAVING SELF-ALIGNED FEATURES FOR MASK SAVING AND ON-RESISTANCE REDUCTION
TRENCH MOSFET STRUCTURE HAVING SELF-ALIGNED FEATURES FOR MASK SAVING AND ON-RESISTANCE REDUCTION
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机译:具有自对准特征的沟槽MOSFET结构,可节省掩模并降低导通电阻
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摘要
A trench MOSFET structure having self-aligned features for mask saving and on-resistance reduction is disclosed, wherein the source region is formed by performing source Ion Implantation through contact opening of a contact interlayer, and further source diffusion. A dielectric sidewall spacer is formed on sidewalls of the contact interlayer in the contact open areas to define trenched source-body contacts for on-resistance reduction and avalanche capability improvement.
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