SYSTEM AND METHOD OF COMBINING DAMASCENES AND SUBTRACT METAL ETCH FOR ADVANCED BACK END OF LINE INTERCONNECTIONS

摘要

Metal interconnections are formed in an integrated by combining damascene processes and subtractive metal etching. A wide trench is formed in a dielectric layer. A conductive material is deposited in the wide trench. Trenches are etched in the conductive material to delineate a plurality of metal plugs each contacting a respective metal track exposed by the wide trench.