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Structures for grounding metal shields in backside illumination image sensor chips

机译:背面照明图像传感器芯片中金属屏蔽层的接地结构

摘要

A device includes a semiconductor substrate having a front side and a backside. A photo-sensitive device is disposed on the front side of the semiconductor substrate. A dielectric layer is disposed on the backside of the semiconductor substrate, wherein the dielectric layer is over a back surface of the semiconductor substrate. A metal shield is over the dielectric layer and overlapping the photo-sensitive device. A metal plug penetrates through the dielectric layer, wherein the metal plug electrically couples the metal shield to the semiconductor substrate.
机译:器件包括具有正面和背面的半导体衬底。光敏器件设置在半导体衬底的前侧。介电层设置在半导体衬底的背面上,其中介电层在半导体衬底的背面上方。金属屏蔽层位于介电层上方并与光敏器件重叠。金属塞穿透介电层,其中金属塞将金属屏蔽电耦合至半导体衬底。

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