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ULTRATHIN BODY FULLY DEPLETED SILICON-ON-INSULATOR INTEGRATED CIRCUITS AND METHODS FOR FABRICATING SAME
ULTRATHIN BODY FULLY DEPLETED SILICON-ON-INSULATOR INTEGRATED CIRCUITS AND METHODS FOR FABRICATING SAME
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机译:超薄绝缘体上完全耗尽的硅集成电路及其制造方法
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摘要
Integrated circuits and methods for fabricating integrated circuits are provided. In an embodiment, a method for fabricating an integrated circuit includes providing an ultrathin body (UTB) fully depleted silicon-on-insulator (FDSOI) substrate. A PFET temporary gate structure and an NFET temporary gate structure are formed on the substrate. The method implants ions to form lightly doped active areas around the gate structures. A diffusionless annealing process is performed on the active areas. Further, a compressive strain region is formed around the PFET gate structure and a tensile strain region is formed around the NFET gate structure.
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