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Vertical current controlled silicon on insulator (SOI) device such as a silicon controlled rectifier and method of forming vertical SOI current controlled devices
Vertical current controlled silicon on insulator (SOI) device such as a silicon controlled rectifier and method of forming vertical SOI current controlled devices
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机译:垂直电流控制的绝缘体上硅(SOI)器件(例如可控硅整流器)和形成垂直SOI电流控制器件的方法
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摘要
A Silicon on Insulator (SOI) Integrated Circuit (IC) chip with devices such as a vertical Silicon Controlled Rectifier (SCR), vertical bipolar transistors, a vertical capacitor, a resistor and/or a vertical pinch resistor and method of making the device(s). The devices are formed in a seed hole through the SOI surface layer and insulator layer to the substrate. A buried diffusion, e.g., N-type, is formed through the seed hole in the substrate. A doped epitaxial layer is formed on the buried diffusion and may include multiple doped layers, e.g., a P-type layer and an N-type layer. Polysilicon, e.g., P-type, may be formed on the doped epitaxial layer. Contacts to the buried diffusion are formed in a contact liner.
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