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Post etch treatment (PET) of a low-K dielectric film
Post etch treatment (PET) of a low-K dielectric film
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机译:低K介电膜的蚀刻后处理(PET)
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摘要
Post etch treatments (PETs) of low-k dielectric films are described. For example, a method of patterning a low-k dielectric film includes etching a low-k dielectric layer disposed above a substrate with a first plasma process. The etching involves forming a fluorocarbon polymer on the low-k dielectric layer. The low-k dielectric layer is surface-conditioned with a second plasma process. The surface-conditioning removes the fluorocarbon polymer and forms an Si—O-containing protecting layer on the low-k dielectric layer. The Si—O-containing protecting layer is removed with a third plasma process.
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