首页> 外国专利> ALLOTROPIC OR MORPHOLOGIC CHANGE IN SILICON INDUCED BY ELECTROMAGNETIC RADIATION FOR RESISTANCE TURNING OF INTEGRATED CIRCUITS

ALLOTROPIC OR MORPHOLOGIC CHANGE IN SILICON INDUCED BY ELECTROMAGNETIC RADIATION FOR RESISTANCE TURNING OF INTEGRATED CIRCUITS

机译:电磁辐射在集成电路中引起电阻变化的硅的同素异形或形态变化

摘要

An electronic device includes a semiconductor substrate and a dielectric layer over the substrate. A resistive link located over the substrate includes a first resistive region and a second resistive region. The first resistive region has a first resistivity and a first morphology. The second resistive region has a second resistivity and a different second morphology.
机译:电子设备包括半导体衬底和在衬底上方的介电层。位于衬底上方的电阻链包括第一电阻区域和第二电阻区域。第一电阻区域具有第一电阻率和第一形态。第二电阻区域具有第二电阻率和不同的第二形态。

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