METHOD FOR FABRICATING SEMICONDUCTOR DEVICE INCLUDING SILICON-CONTAINING LAYER AND METAL-CONTAINING LAYER, AND CONDUCTIVE STRUCTURE OF THE SAME

摘要

A method for fabricating a semiconductor device includes forming a silicon-containing layer; forming a metal-containing layer over the silicon-containing layer; forming an undercut prevention layer between the silicon containing layer and the metal containing layer; etching the metal-containing layer; and forming a conductive structure by etching the undercut prevention layer and the silicon-containing layer.