首页>
外国专利>
Split trench-gate MOSFET with integrated Schottky diode
Split trench-gate MOSFET with integrated Schottky diode
展开▼
机译:带集成肖特基二极管的分离式沟槽栅MOSFET
展开▼
页面导航
摘要
著录项
相似文献
摘要
A split trench-gate MOSFET device and method for forming this device is disclosed. The device has a trench gate structure, comprising a shield electrode and two gate electrodes, wherein a substantial portion of shield electrode region is lower than the gate electrode region, and wherein a portion of the shield electrode region extends to the top surface between the two gate electrodes. The device further comprises a source metal layer, contacting to an initial layer, a well region, the shield electrode and a source region at the top surface, wherein the contact between the source metal layer and the initial layer forms a Schottky diode.
展开▼