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Structure and method for integrating front end SiCr resistors in HiK metal gate technologies
Structure and method for integrating front end SiCr resistors in HiK metal gate technologies
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机译:HiK金属栅极技术中集成前端SiCr电阻器的结构和方法
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摘要
An integrated circuit having a replacement HiK metal gate transistor and a front end SiCr resistor. The SiCr resistor replaces the conventional polysilicon resistor in front end processing and is integrated into the contact module. The first level of metal interconnect is located above the SiCr resistor. First contacts connect to source/drain regions. Second contacts electrically connect the first level of interconnect to either the SiCr resistor or the metal replacement gate.
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