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Method of forming isolation structures for SOI devices with ultrathin SOI and ultrathin box
Method of forming isolation structures for SOI devices with ultrathin SOI and ultrathin box
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机译:用超薄SOI和超薄盒形成用于SOI器件的隔离结构的方法
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摘要
Shallow trenches are formed around a vertical stack of a buried insulator portion and a top semiconductor portion. A dielectric material layer is deposited directly on sidewalls of the top semiconductor portion. Shallow trench isolation structures are formed by filling the shallow trenches with a dielectric material such as silicon oxide. After planarization, the top semiconductor portion is laterally contacted and surrounded by the dielectric material layer. The dielectric material layer prevents exposure of the handle substrate underneath the buried insulator portion during wet etches, thereby ensuring electrical isolation between the handle substrate and gate electrodes subsequently formed on the top semiconductor portion.
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