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Layout design defect repair based on inverse lithography and traditional optical proximity correction

机译:基于反光刻和传统光学邻近校正的布局设计缺陷修复

摘要

Aspects of the invention relate to techniques for repairing layout design defects after layout data have been processed by resolution enhancement techniques. The repair process first determines a re-correction region that includes three portions: core, context and visible portions. An inverse lithography process is then performed on the core portion of the re-correction region while taking into account effects from the context portion of the re-correction region to generate a first modified re-correction region. A traditional OPC process is then performed on the core and context portions of the first modified re-correction region while taking into account effects from the visible portion of the first modified re-correction region to generate a second modified re-correction region.
机译:本发明的方面涉及用于在已经通过分辨率增强技术处理了布局数据之后修复布局设计缺陷的技术。修复过程首先确定包括三个部分的重新校正区域:核心,上下文和可见部分。然后,在考虑来自再校正区域的上下文部分的影响的同时,在再校正区域的核心部分上执行反光刻工艺,以生成第一修改后的再校正区域。然后,在对第一修改的再校正区域的核心和上下文部分进行传统的OPC处理的同时,考虑到来自第一修改的再校正区域的可见部分的影响,以生成第二修改的再校正区域。

著录项

  • 公开/公告号US8713488B2

    专利类型

  • 公开/公告日2014-04-29

    原文格式PDF

  • 申请/专利权人 MENTOR GRAPHICS CORPORATION;

    申请/专利号US201313740639

  • 发明设计人 KYOHEI SAKAJIRI;

    申请日2013-01-14

  • 分类号G06F17/50;

  • 国家 US

  • 入库时间 2022-08-21 15:59:57

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