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Method of forming an insulated gate field effect transistor device having a shield electrode structure
Method of forming an insulated gate field effect transistor device having a shield electrode structure
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机译:形成具有屏蔽电极结构的绝缘栅场效应晶体管器件的方法
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摘要
A method for forming a transistor having insulated gate electrodes and insulated shield electrodes within trench regions includes forming dielectric stack overlying a substrate. The dielectric stack includes a first layer of one material overlying the substrate and a second layer of a different material overlying the first layer. Trench regions are formed adjacent to the dielectric stack. After the insulated shield electrodes are formed, the method includes removing the second layer and then forming the insulated gate electrodes. Portions of gate electrode material are removed to form first recessed regions, and spacers are formed within the first recessed regions. Enhancements regions are then formed in the gate electrode material self-aligned to the spacers.
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