METHOD OF FORMING AN INSULATED GATE FIELD EFFECT TRANSISTOR DEVICE HAVING A SHIELD ELECTRODE STRUCTURE

摘要

In one embodiment, a method of forming a transistor with insulated gate electrodes and insulated shield electrodes in trench regions comprises forming a disposable dielectric stack on a substrate. The method also includes forming trench regions adjacent the disposable dielectric stack. After the insulated gate electrodes are formed, the method includes removing the disposable dielectric stack, and thereafter forming spacers adjacent to the insulated gate electrodes. The method further includes using spacers to form isolated gate electrodes and recessed regions in the substrate, and thereafter forming the enhancement regions in the first and second recessed regions.