A METHOD FOR FORMING DIFFERENT GATE DIELECTRICS WITH NMOS AND PMOS TRANSISTORS IN A COMPLEMENTARY METAL OXIDE SEMICONDUCTOR INTERGRATED CIRCUIT

摘要

Complementary metal oxide semiconductor integrated circuits may be formed with NMOS and PMOS transistors having different gate dielectrics. The different gate dielectrics may be formed, for example, by a replacement process. The gate dielectrics may differ in material, thickness, or formation techniques, as a few examples.