METHOD FOR PRODUCING A GAN-BASED OPTOELECTRONIC SEMICONDUCTOR CHIP BY ION IMPLANTATION AND A CORRESPONDING OPTOELECTRONIC SEMICONDUCTOR CHIP

摘要

In at least one embodiment, the method is designed for producing an optoelectronic semiconductor chip (1). The method comprises the following steps: - providing a growth substrate (2); - creating a semiconductor layer sequence (3) on said growth substrate (2), wherein the semiconductor layer sequence (3) has an n-side (31), a p-side (33) and an active layer (33) intended for the generation of a radiation, the active layer (32) is arranged between the p-side (33) and the n-side (31), and the n-side (31) is closest to the growth substrate (2); and - doping the n-side (31) through the active layer (32) by means of ion implantation.