首页> 外国专利> OPTOELECTRONIC SEMICONDUCTOR CHIP COMPRISING A WAVELENGTH CONVERSION SUBSTANCE AND OPTOELECTRONIC SEMICONDUCTOR COMPONENT COMPRISING SUCH A SEMICONDUCTOR CHIP, AND METHOD FOR PRODUCING THE OPTOELECTRONIC SEMICONDUCTOR CHIP

OPTOELECTRONIC SEMICONDUCTOR CHIP COMPRISING A WAVELENGTH CONVERSION SUBSTANCE AND OPTOELECTRONIC SEMICONDUCTOR COMPONENT COMPRISING SUCH A SEMICONDUCTOR CHIP, AND METHOD FOR PRODUCING THE OPTOELECTRONIC SEMICONDUCTOR CHIP

机译:包括波长转换物质的光电半导体芯片和包含这种半导体芯片的光电半导体组件以及制造光电半导体芯片的方法

摘要

a semiconductor body (1), which comprises a semiconductor layer sequence suitable for emitting electromagnetic radiation from a first wavelength range from its front side (2), a first wavelength-converting layer (6) on at least one first partial region (5) of the front side (2) of the semiconductor body (1) with a first wavelength conversion substance (7), which converts radiation from the first wavelength range into radiation from a second wavelength range, which is different from the first wavelength range, wherein at least one second partial region (8) of the front side (2) is free of the first wavelength-converting layer (S). An optoelectronic component comprising such a semiconductor body and also a method for producing the semiconductor chip are furthermore described.
机译:半导体本体(1),其包括适于从其正面(2)的第一波长范围发射电磁辐射的半导体层序列,在至少一个第一局部区域(5)上的第一波长转换层(6)。用第一波长转换物质(7)将半导体本体(1)的正面(2)转换为第一波长转换物质(7),该第一波长转换物质将来自第一波长范围的辐射转换为来自不同于第一波长范围的第二波长范围的辐射,其中正面(2)的至少一个第二部分区域(8)没有第一波长转换层(S)。此外,描述了一种包括这种半导体本体的光电子部件以及一种用于制造半导体芯片的方法。

著录项

  • 公开/公告号KR20090015987A

    专利类型

  • 公开/公告日2009-02-12

    原文格式PDF

  • 申请/专利权人 OSRAM OPTO SEMICONDUCTORS GMBH;

    申请/专利号KR20087031270

  • 发明设计人 BERBEN DIRK;JERMANN FRANK;

    申请日2008-12-23

  • 分类号H01L33;

  • 国家 KR

  • 入库时间 2022-08-21 19:13:58

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