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SYSTEMS AND METHODS EMPLOYING A PHYSICALLY ASYMMETRIC SEMICONDUCTOR DEVICE HAVING SYMMETRICAL ELECTRICAL BEHAVIOR

机译:采用具有对称电气特性的物理不对称半导体器件的系统和方法

摘要

An integrated circuit device comprising a first elongate structure and a second elongate structure arranged parallel to each other and defining a space therebetween. The integrated circuit device also includes conductive structures distributed in the space between the first and second elongate structures. At least a first one of the conductive structures is placed closer to the first elongate structure than to the second elongate structure. At least a second one of the conductive structures is placed closer to the second elongate structure than to the first elongate structure.
机译:一种集成电路器件,包括彼此平行布置并在其间限定空间的第一细长结构和第二细长结构。该集成电路器件还包括分布在第一和第二细长结构之间的空间中的导电结构。导电结构中的至少第一导电结构被放置成比第二伸长结构更靠近第一伸长结构。导电结构中的至少第二导电结构被放置成比第一伸长结构更靠近第二伸长结构。

著录项

  • 公开/公告号EP2513965B1

    专利类型

  • 公开/公告日2014-03-26

    原文格式PDF

  • 申请/专利权人 QUALCOMM INC;

    申请/专利号EP20100795897

  • 申请日2010-12-15

  • 分类号H01L21/8234;H01L27/02;H01L27/088;

  • 国家 EP

  • 入库时间 2022-08-21 15:49:18

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