ITO THIN FILM SPUTTERING PROCESS METHOD AND ITO THIN FILM SPUTTERING DEVICE

摘要

An ITO thin film sputtering method comprises the following steps: (1) introducing process gas into a reaction chamber and setting pressure of the process gas in the reaction chamber to be higher than preset pressure that can enable glow discharge of the process gas; (2) enabling a direct current sputtering power supply, exerting sputtering power on a target material and restricting output voltage of the direct current power supply so that the output voltage is less than or equal to a preset voltage value; (3) reducing the pressure of the process gas in the reaction chamber to be lower than the preset pressure, and using the direct current sputtering power supply to exert the sputtering power on the target material to perform sputtering. Also provided is an ITO thin film sputtering device based on the ITO thin film sputtering method.