首页> 外文会议>International meeting on information display;International display manufacturing conference and Asia display;IMID/IDMC/Asia Display 2010 >Development of Low Temperature High Quality ITO Thin Film for Flexible Microelectronic Device based on Plastic substrate by Magnetic Field Shielded Sputtering Process
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Development of Low Temperature High Quality ITO Thin Film for Flexible Microelectronic Device based on Plastic substrate by Magnetic Field Shielded Sputtering Process

机译:磁场屏蔽溅射技术开发基于塑料基板的柔性微电子器件用低温优质ITO薄膜

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We developed the Magnetic Field Shielded Sputtering (MFSS) process as a room temperature deposition process for ITO electrode deposition on plastic substrates. To evaluate the effect of the MFSS system, we compared the MFSS processed film with the DC magnetron sputtering (DMS) processed ITO thin film under the same deposition conditions. The MFSS processed ITO thin film showed significantly lower resistivity (4.7×10~(-4)Ω·cm) and higher carrier mobility (23.5cm~2/V·s) than the DMS processed ITO thin film (1.1×10~(-3)Ω·cm, 9.5cm~2'/V·s) at room temperature.
机译:我们开发了磁场屏蔽溅射(MFSS)工艺作为室温沉积工艺,用于在塑料基板上沉积ITO电极。为了评估MFSS系统的效果,我们在相同的沉积条件下将MFSS处理过的膜与DC磁控溅射(DMS)处理过的ITO薄膜进行了比较。 MFSS处理的ITO薄膜比DMS处理的ITO薄膜(1.1×10〜()电阻率低得多(4.7×10〜(-4)Ω·cm),载流子迁移率高(23.5cm〜2 / V·s)。 -3)Ω·cm,在室温下为9.5cm〜2'/ V·s)。

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