Non-volatile resistive memory devices with boosting capacitor and methods for biasing resistive memory structures thereof

摘要

Non-volatile resistive memory device comprising memory cells and bit, word, source and form lines for addressing and biasing the memory cells, a memory controller for applying voltages to said lines, each of the memory cells comprising a cell selecting transistor, a resistive memory structure serially connected to a drain-source path of the cell selecting transistor, the resistive memory structure and the cell selecting transistor together forming a conductive path between the bit lines and the source lines and the gate of the cell selecting transistor being connected to the word lines and a boosting capacitor connected between the form lines and an internal node of the memory cell at a connection between the resistive memory structure and the cell selecting transistor, said boosting capacitor being configured for boosting a voltage on said internal node. The invention also relates to a method for biasing such resistive memory device.