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Non-volatile resistive memory devices with boosting capacitor and methods for baising resistive memory structures thereof
Non-volatile resistive memory devices with boosting capacitor and methods for baising resistive memory structures thereof
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机译:具有升压电容器的非易失性电阻存储器件及其电阻存储结构的平衡方法
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摘要
Non-volatile resistive memory device comprising memory cells and bit, word, source and form lines for addressing and biasing the memory cells, a memory controller for applying voltages to said lines, each of the memory cells comprising a cell selecting transistor, a resistive memory structure serially connected to a drain-source path of the cell selecting transistor, the resistive memory structure and the cell selecting transistor together forming a conductive path between the bit lines and the source lines and the gate of the cell selecting transistor being connected to the word lines and a boosting capacitor connected between the form lines and an internal node of the memory cell at a connection between the resistive memory structure and the cell selecting transistor, said boosting capacitor being configured for boosting a voltage on said internal node. The invention also relates to a method for biasing such resistive memory device.
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